The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Feb. 15, 2018
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 11/40 (2006.01); H01L 29/786 (2006.01); G11C 19/28 (2006.01); G06F 5/10 (2006.01);
U.S. Cl.
CPC ...
G11C 5/06 (2013.01); G06F 5/10 (2013.01); G11C 11/40 (2013.01); G11C 19/282 (2013.01); G11C 19/287 (2013.01); H01L 29/7869 (2013.01);
Abstract
According to an embodiment, a semiconductor device includes a plurality of first interconnections, a plurality of gate dielectric films, and a plurality of second interconnections. The plurality of first interconnections are oxide semiconductors formed in parallel at predetermined intervals in a first direction. The plurality of gate dielectric films are formed on surfaces of the first interconnections, respectively. The plurality of second interconnections are conductors formed at predetermined intervals in parallel to a second direction orthogonal to the first direction, respectively, to bridge over the gate dielectric films.