The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Jul. 05, 2019
Applicant:
Hoya Corporation, Tokyo, JP;
Inventors:
Kazuhiro Hamamoto, Tokyo, JP;
Yohei Ikebe, Tokyo, JP;
Assignee:
HOYA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/32 (2012.01); C03C 15/00 (2006.01); C03C 17/34 (2006.01); C03C 3/06 (2006.01); C03C 17/36 (2006.01); C03C 23/00 (2006.01); G03F 1/48 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); C03C 3/06 (2013.01); C03C 15/00 (2013.01); C03C 17/3435 (2013.01); C03C 17/3441 (2013.01); C03C 17/3636 (2013.01); C03C 23/0075 (2013.01); G03F 1/32 (2013.01); G03F 1/48 (2013.01); C03C 2204/08 (2013.01);
Abstract
A reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μmis not more than 17 nm.