The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Nov. 20, 2018
Applicant:

Elenion Technologies, Llc, New York, NY (US);

Inventors:

Lim Eu-Jin Andy, Singapore, SG;

Yangjin Ma, Brooklyn, NY (US);

Alexandre Horth, Astoria, NY (US);

Yang Liu, Elmhurst, NY (US);

Assignee:

Elenion Technologies, LLC, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/035 (2006.01); G02F 1/025 (2006.01); H01L 29/94 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 21/22 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); H01L 29/66189 (2013.01); H01L 29/94 (2013.01); G02F 2202/104 (2013.01); G02F 2202/105 (2013.01); G02F 2203/50 (2013.01); H01L 21/22 (2013.01); H01L 21/308 (2013.01);
Abstract

A MOSCAP phase adjuster includes two conductive regions with a thin insulating region therebetween, where charge is accumulated or depleted. In conventional MOSCAP modulators, the conductive and insulating regions are superposed layers, extending horizontally parallel to the substrate, which limits waveguide design and mode confinement, resulting in reduced phase shift performance. An improved MOSCAP phase adjuster and method of fabricating a MOSCAP phase adjuster includes depositing the material for the second conductive region beside and over top of the first conductive region after oxidation, and selectively etching the material to form the second conductive region.


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