The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Dec. 16, 2015
Applicant:

Sumco Corporation, Tokyo, JP;

Inventors:

Kazutaka Eriguchi, Saga, JP;

Tsuyoshi Kubota, Saga, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/64 (2006.01); G01N 21/95 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01T 19/02 (2006.01);
U.S. Cl.
CPC ...
G01N 21/6489 (2013.01); G01N 21/9501 (2013.01); H01L 21/0223 (2013.01); H01L 21/02299 (2013.01); H01L 22/12 (2013.01); H01T 19/02 (2013.01);
Abstract

Provided is a method of evaluating a semiconductor substrate, which evaluates quality of the semiconductor substrate by a photoluminescence measurement, wherein the evaluation by the photoluminescence measurement includes, after subjecting a surface of an evaluation-target semiconductor substrate to a pretreatment, irradiating the surface with excitation light, and then detecting emission obtained from the surface having been irradiated with the excitation light, and the pretreatment includes subjecting the surface of the evaluation-target semiconductor substrate to be irradiated with the excitation light to an oxide film formation treatment and charging the surface of the formed oxide film by corona discharge.


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