The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Sep. 10, 2010
Kenji Sakamoto, Tokyo, JP;
Masayuki Tsuji, Tokyo, JP;
Kenji Sakamoto, Tokyo, JP;
Masayuki Tsuji, Tokyo, JP;
SUMCO Corporation, Tokyo, JP;
Abstract
After removing deposit on a susceptor in an epitaxial growth furnace by a cleaning recipe (step S), a first epitaxial wafer is produced by growing an epitaxial layer on a first wafer based on a process recipe A (step S). Subsequently, a step of producing an epitaxial wafer by growing an epitaxial layer on a wafer based on a process recipe B including second control parameters set such that the epitaxial wafer has approximately the same film thickness profile as the first wafer (step S) is repeated a plurality of times to successively produce a plurality of epitaxial wafers (step S). The cleaning recipe, the process recipe A, and the process recipe B repeated a plurality of times are carried out repeatedly (step S).