The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Aug. 03, 2018
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Aniruddha Joi, San Jose, CA (US);

Kailash Venkatraman, Sunnyvale, CA (US);

Yezdi Dordi, Palo Alto, CA (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 18/16 (2006.01); C23C 16/455 (2006.01); C23C 18/54 (2006.01); C23C 18/40 (2006.01); C23C 18/08 (2006.01); C23C 18/34 (2006.01); C23C 18/52 (2006.01); C23C 18/44 (2006.01); C23C 18/02 (2006.01); C23F 3/04 (2006.01); H01L 21/02 (2006.01); H05K 3/42 (2006.01); H01L 21/288 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H05K 3/18 (2006.01);
U.S. Cl.
CPC ...
C23C 18/1619 (2013.01); C23C 16/45525 (2013.01); C23C 18/02 (2013.01); C23C 18/08 (2013.01); C23C 18/1608 (2013.01); C23C 18/168 (2013.01); C23C 18/1632 (2013.01); C23C 18/1675 (2013.01); C23C 18/1683 (2013.01); C23C 18/34 (2013.01); C23C 18/40 (2013.01); C23C 18/44 (2013.01); C23C 18/52 (2013.01); C23C 18/54 (2013.01); C23F 3/04 (2013.01); H01L 21/02074 (2013.01); H01L 21/288 (2013.01); H01L 21/28562 (2013.01); H01L 21/6723 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H05K 3/422 (2013.01); H05K 3/187 (2013.01);
Abstract

A method of performing electroless electrochemical atomic layer deposition is provided and includes: providing a substrate including an exposed upper metal layer; exposing the substrate to a first precursor solution to create a sacrificial metal monolayer on the exposed upper metal layer via underpotential deposition, where the first precursor solution is an aqueous solution including a reducing agent; subsequent to the forming of the sacrificial metal monolayer, rinsing the substrate; subsequent to the rinsing of the substrate, exposing the substrate to a second precursor solution to replace the sacrificial metal monolayer with a first deposition layer; and subsequent to replacing the sacrificial metal monolayer with the first deposition layer, rinsing the substrate. The exposure of the substrate to the first precursor solution and the exposure of the substrate to the second precursor solution are electroless processes.


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