The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Dec. 27, 2017
Applicant:
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Inventors:
Thomas E. Sutto, Woodbridge, VA (US);
Amy Ng, Alexandria, VA (US);
Nabil D. Bassim, Silver Spring, MD (US);
Todd H. Brintlinger, Washington, DC (US);
Michael S. Osofsky, Clarksville, MD (US);
Rhonda Michele Stroud, Washington, DC (US);
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
C01B 19/04 (2006.01); H01B 17/56 (2006.01);
U.S. Cl.
CPC ...
C01B 19/04 (2013.01); H01B 17/56 (2013.01); C01P 2002/08 (2013.01); C01P 2004/24 (2013.01); C01P 2006/40 (2013.01); C01P 2006/80 (2013.01);
Abstract
A method to produce high quality single or a few atomic layers thick samples of a topological insulating layered dichalcogenide. The overall process involves grinding layered dichalcogenides, adding them to an ionic liquid, and then using a mechanical method to cause intercalation of the ionic liquid into the van der Waals (VDW) gap between the layers of the metal chalcogenide.