The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Feb. 14, 2018
Applicant:

Dunan Microstaq, Inc., Austin, TX (US);

Inventors:

Wayne C. Long, Austin, TX (US);

Joseph L. Nguyen, Austin, TX (US);

Assignee:

Dunan Microstaq, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01); G01L 19/14 (2006.01); G01L 19/04 (2006.01); G01L 9/04 (2006.01); G01L 9/06 (2006.01); H01L 21/50 (2006.01); B81C 3/00 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
B81C 3/001 (2013.01); B81B 7/0048 (2013.01); G01L 19/147 (2013.01); B81B 2201/0264 (2013.01); B81C 2203/035 (2013.01);
Abstract

A method of attaching a MEMS die to a base includes selecting an attachment material (x), determining a maximum acceptable change in pressure due to mounting stress (dPtarget) transmitted to a MEMS die, determining a worst-case pressure difference transfer function of the attachment material (x) over a thickness (h) variation of the attachment material (x) using the equation: dPmax=h*B+C, wherein B=pressure variation/thickness (h), and C=pressure variation, substituting dPtarget for dPmaxin the pressure difference transfer function and solving the equation for h, wherein h=(dPtarget−C)/B, and attaching the MEMS die to a base using the selected attachment material (x) having at least the calculated thickness (h).


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