The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

May. 21, 2015
Applicant:

Azur Space Solar Power Gmbh, Heilbronn, DE;

Inventors:

Wolfgang Guter, Stuttgart, DE;

Matthias Meusel, Heilbronn, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0725 (2012.01); H01L 31/0735 (2012.01); H01L 31/0687 (2012.01); H01L 31/076 (2012.01); H01L 31/18 (2006.01); H01L 27/30 (2006.01); H01L 31/0693 (2012.01); H01L 31/041 (2014.01); H01L 31/065 (2012.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 49/02 (2006.01); H01L 21/02 (2006.01); H01L 41/08 (2006.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); H01L 31/0687 (2013.01); H01L 31/06875 (2013.01); H01L 31/0735 (2013.01); H01L 21/02304 (2013.01); H01L 27/302 (2013.01); H01L 28/56 (2013.01); H01L 31/041 (2014.12); H01L 31/065 (2013.01); H01L 31/0693 (2013.01); H01L 31/076 (2013.01); H01L 31/12 (2013.01); H01L 31/184 (2013.01); H01L 31/1844 (2013.01); H01L 31/1848 (2013.01); H01L 33/002 (2013.01); H01L 33/508 (2013.01); H01L 41/0815 (2013.01); Y02E 10/544 (2013.01);
Abstract

A solar cell stack having a first semiconductor solar cell that has a p-n junction of a first material with a first lattice constant and a second semiconductor solar cell that has a p-n junction of a second material with a second lattice constant. The solar cell stack has a metamorphic buffer that includes a sequence of a first, lower layer and a second, center layer, and a third, upper layer, and includes an InGaAs or an AlInGaAs or an InGaP or an AlInGaP compound. The metamorphic buffer is formed between the first and second semiconductor solar cells and the lattice constant in the metamorphic buffer changes along the buffer's thickness dimension. The lattice constant of the third layer is greater than the lattice constant of the second layer, and the lattice constant of the second layer is greater than the lattice constant of the first layer.


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