The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Oct. 24, 2018
Applicant:

The Charles Stark Draper Laboratory, Inc., Cambridge, MA (US);

Inventors:

Steven J. Spector, Lexington, MA (US);

Robin Mark Adrian Dawson, Waltham, MA (US);

Michael G. Moebius, Somerville, MA (US);

Benjamin F. Lane, Sherborn, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/028 (2006.01); H01L 31/111 (2006.01); G01J 1/02 (2006.01); G01T 1/24 (2006.01); H01L 31/107 (2006.01); H04B 10/70 (2013.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02027 (2013.01); G01J 1/02 (2013.01); G01T 1/248 (2013.01); H01L 31/028 (2013.01); H01L 31/107 (2013.01); H01L 31/111 (2013.01); H01L 29/7313 (2013.01); H04B 10/70 (2013.01);
Abstract

A single photon detection circuit is described that includes a germanium photodiode that is configured with zero voltage bias to avoid dark current output when no photon input is present and also is configured to respond to a single photon input by generating a photovoltaic output voltage. A single electron bipolar avalanche transistor (SEBAT) has a base emitter junction connected in parallel with the germanium photodiode and is configured so that the photovoltaic output voltage triggers an avalanche collector current output.


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