The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Jan. 28, 2019
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Teng-Yen Huang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/76224 (2013.01); H01L 21/76243 (2013.01); H01L 21/76294 (2013.01); H01L 29/66795 (2013.01);
Abstract

The present disclosure relates to a fin structure and a method for manufacturing the same. The fin structure includes a substrate and at least one fin block. The fin block is disposed on the substrate. The fin block includes an isolation layer and a top fin layer. The isolation layer is disposed on the substrate. The top fin layer is disposed on the isolation layer. At least a portion of the top fin layer is exposed. The top fin layer is an epitaxial layer. The isolation layer is in contact with the top fin layer.


Find Patent Forward Citations

Huang, Teng-Yen. (2020). Fin structure and method for manufacturing the same (U.S. Patent No. 10636911). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10636911

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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