The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Aug. 07, 2014
Robert Bosch Gmbh, Stuttgart, DE;
Achim Trautmann, Leonberg, DE;
Christian Tobias Banzhaf, Laichingen, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method for producing a substrate for a metal-oxide-semiconductor field-effect transistor or a micro-electromechanical system includes dry etching a preliminary trench into the substrate by using a structured first masking layer. The substrate includes a silicon carbide layer, and the dry etching is carried out in such a way that a remnant of the first structured masking layer remains. The method further includes applying a second masking layer at least to walls of the preliminary trench and dry etching by using the remnant of the first masking layer and the second masking layer so as to produce a trench with a step in the trench.