The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Nov. 15, 2016
Infineon Technologies Austria Ag, Villach, AT;
Gilberto Curatola, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes a type III-V semiconductor body having a main surface and a rear surface opposite the main surface. A barrier region is disposed beneath the main surface. A buffer region is disposed beneath the barrier region. A first two-dimensional charge carrier gas region forms near an interface between the barrier region and the buffer region. A second two-dimensional charge carrier gas region forms near an interface between the buffer region and the first back-barrier region. A third two-dimensional charge carrier gas region forms near an interface between the first back-barrier region and the second back-barrier region. Both of the second and third two-dimensional charge carrier gas regions have an opposite carrier type as the first two-dimensional charge carrier gas region. The third two-dimensional charge carrier gas region is more densely populated with charge carriers than the second two-dimensional charge carrier gas region.