The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Oct. 25, 2018
Semiconductor device having a collector layer including first-conductivity-type semiconductor layers
Applicant:
Murata Manufacturing Co., Ltd., Kyoto-fu, JP;
Inventors:
Yasunari Umemoto, Nagaokakyo, JP;
Atsushi Kurokawa, Nagaokakyo, JP;
Tsunekazu Saimei, Nagaokakyo, JP;
Assignee:
Murata Manufacturing Co., Ltd., Kyoto-fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/12 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/122 (2013.01); H01L 29/205 (2013.01); H01L 29/36 (2013.01); H01L 29/6631 (2013.01); H01L 29/66242 (2013.01);
Abstract
In a bipolar transistor, a collector layer includes three semiconductor layers: an n-type GaAs layer (Si concentration: about 5×10cm, thickness: about 350 nm), a p-type GaAs layer (C concentration: about 4.5×10cm, thickness: about 100 nm, sheet concentration: 4.5×10cm), and an n-type GaAs layer Si concentration: about 5×10cm, thickness: about 500 nm. The sheet concentration of the p-type GaAs layer is set to less than 1×10cm.