The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Jul. 26, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Lars Müller-Meskamp, Wallgaesschen, DE;
Luca Pirro, Dresden, DE;
Edward J. Nowak, Shelburne, VT (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1045 (2013.01); H01L 29/167 (2013.01); H01L 29/4983 (2013.01); H01L 29/512 (2013.01); H01L 29/66659 (2013.01); H01L 29/7831 (2013.01); H01L 29/7838 (2013.01);
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to devices with channel extension regions and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; and a channel below the gate structure, the channel comprising: a first channel region, adjacent to the source region; and a second channel region, adjacent to the drain region and comprising a lower threshold voltage than the first channel region.