The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Jan. 21, 2019
Yeong-chang Chou, Irvine, CA (US);
Hsu-hwei Chen, Redondo Beach, CA (US);
Hui MA, Manhattan Beach, CA (US);
Thomas R. Young, Manhattan Beach, CA (US);
Youngmin Kim, Manhattan Beach, CA (US);
Jansen J. Uyeda, Manhattan Beach, CA (US);
Yeong-Chang Chou, Irvine, CA (US);
Hsu-Hwei Chen, Redondo Beach, CA (US);
Hui Ma, Manhattan Beach, CA (US);
Thomas R. Young, Manhattan Beach, CA (US);
Youngmin Kim, Manhattan Beach, CA (US);
Jansen J. Uyeda, Manhattan Beach, CA (US);
NORTHROP GRUMMAN SYSTEMS CORPORATION, Falls Church, VA (US);
Abstract
A semiconductor device includes a plurality of base layers. A tunneling layer is disposed on the plurality of base layers. A contact layer is disposed on the tunneling layer. An alloyed metal contact is annealed on to the contact layer. The alloyed metal contact forms a first region and a second region in the contact layer. The first region of the contact layer diffuses into the tunneling layer. The second region of the contact layer resides over the tunneling layer. The tunneling layer facilitates electron mobility of the second region.