The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Sep. 04, 2018
Applicants:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

The University of Tokyo, Tokyo, JP;

Inventors:

Hirofumi Yoshikawa, Sakai, JP;

Yasuhiko Arakawa, Tokyo, JP;

Assignees:

SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;

The University of Tokyo, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 31/09 (2006.01); H01L 31/0384 (2006.01); H01L 31/0304 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14652 (2013.01); H01L 31/03046 (2013.01); H01L 31/03845 (2013.01); H01L 31/035218 (2013.01); H01L 31/035236 (2013.01); H01L 31/09 (2013.01); H01L 31/109 (2013.01);
Abstract

A quantum dot infrared detector includes a quantum dot-stacked structure in which quantum dot layers each containing quantum dots stacked on top of one another and intermediate layers. The quantum dots are sandwiched between the intermediate layers in the height direction of the quantum dots. The quantum dots have conduction band quantum confinement levels that include a conduction band ground level, a conduction band first excitation level at a higher energy position than the conduction band ground level, and a conduction band second excitation level at a higher energy position than the conduction band ground level. An energy gap between the conduction band first excitation level and the conduction band bottom of the intermediate layer and an energy gap between the conduction band second excitation level and the conduction band bottom of the intermediate layer are each smaller than twice thermal energy.


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