The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Sep. 14, 2017
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Tatsuya Kato, Yokkaichi, JP;
Fumitaka Arai, Yokkaichi, JP;
Kohei Sakaike, Yokkaichi, JP;
Satoshi Nagashima, Yokkaichi, JP;
Assignee:
Toshiba Memory Corporation, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 27/11573 (2017.01); H01L 27/11541 (2017.01); H01L 27/1156 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 27/1156 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11541 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01);
Abstract
A semiconductor memory device includes a semiconductor member extending in a first direction, a first interconnect extending in a second direction crossing the first direction, and a first electrode disposed between the semiconductor member and the first interconnect. A curvature radius of a corner portion facing the semiconductor member in the first electrode is larger than a curvature radius of a corner portion facing the first interconnect in the first electrode.