The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
May. 15, 2019
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Se-hyoung Ahn, Seoul, KR;
Youn-soo Kim, Yongin-si, KR;
Jae-hyoung Choi, Hwaseong-si, KR;
Jae-wan Chang, Seoul, KR;
Sun-min Moon, Yongin-si, KR;
Jin-sun Lee, Seongnam-si, KR;
Abstract
A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.