The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Aug. 31, 2017
Kabushiki Kaisha Toshiba, Tokyo, JP;
Koji Kikuchi, Tatsuno Hyogo, JP;
Ryuta Arai, Kuwana Mie, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device includes field-effect transistor having a gate, a drain, and a source. A first clamping circuit is connected between the drain and the gate. The first clamping circuit has a first clamp voltage that is lower than a source-to-drain breakdown voltage of the field-effect transistor. A first resistor in the device has a first end connected to a first node between the first clamping circuit and the gate. A second clamping circuit is connected between the drain and a second end of the first resistor. The second clamping circuit has a second clamp voltage is higher than the first clamp voltage and lower than the source-to-drain breakdown voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile