The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Mar. 07, 2018
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventors:
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/872 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26546 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02631 (2013.01); H01L 21/266 (2013.01); H01L 21/26553 (2013.01); H01L 21/26586 (2013.01); H01L 21/3245 (2013.01); H01L 29/0619 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/66204 (2013.01); H01L 29/7813 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7788 (2013.01);
Abstract
A technique that recovers from degradation in crystalline nature in an ion-implanted region is provided. A method of manufacturing a semiconductor device, includes: an ion implantation step of ion-implanting p-type impurities by a cumulative dose D into an n-type semiconductor layer containing n-type impurities; and a thermal annealing step of annealing an ion-implanted region of the n-type semiconductor layer where the p-type impurities are ion-implanted, in an atmosphere containing nitrogen, at a temperature T for a time t, wherein the cumulative dose D, the temperature T, and the time t satisfy a predetermined relationship.