The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Dec. 20, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Hansel Lo, San Jose, CA (US);
Christopher S. Olsen, Fremont, CA (US);
Eric Kihara Shono, San Mateo, CA (US);
Johanes S. Swenberg, Los Gatos, CA (US);
Erika Hansen, Campbell, CA (US);
Taewan Kim, San Jose, CA (US);
Lara Hawrylchak, Gilroy, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods for conformal radical oxidation of structures are provided. In one implementation, the method comprises flowing hydrogen into a processing chamber at a first flow rate, wherein the processing chamber has a substrate positioned therein. The method further comprises flowing oxygen into a precursor activator at a second flow rate. The method further comprises flowing argon into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the oxygen and argon. The method further comprises flowing the plasma into the processing chamber, wherein the plasma mixes with the hydrogen gas to create an activated processing gas. The method further comprises exposing the substrate to the activated gas to form an oxide film on the substrate. A growth rate of the oxide film is controlled by adjusting the third flow rate.