The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Nov. 15, 2019
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Tomoyuki Sasaki, Tokyo, JP;

Tohru Oikawa, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 21/8239 (2006.01); H01L 43/08 (2006.01); H01L 43/06 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01F 10/32 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/16 (2013.01); G11C 11/1675 (2013.01); H01F 10/324 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01L 21/8239 (2013.01); H01L 27/105 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/06 (2013.01); H01L 43/08 (2013.01); H01F 10/3286 (2013.01);
Abstract

A spin current assisted magnetoresistance effect device includes: a spin current assisted magnetoresistance effect element including a magnetoresistance effect element part and a spin-orbit torque wiring; and a controller electrically connected to the spin current assisted magnetoresistance effect element. In a portion in which the magnetoresistance effect element part and the spin-orbit torque wiring are bonded, an STT inversion current flowing through the magnetoresistance effect element part and an SOT inversion current flowing through the spin-orbit torque wiring merge or are divided, and the controller is configured to be capable of performing control for applying the STT inversion current to the spin current assisted magnetoresistance effect element at the same time as an application of the SOT inversion current or a time application of the SOT inversion current.


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