The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Feb. 27, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Harold Pilo, Underhill, VT (US);
Richard S. Wu, Winooski, VT (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 5/14 (2006.01); G11C 11/417 (2006.01); G11C 8/08 (2006.01); G11C 11/418 (2006.01);
U.S. Cl.
CPC ...
G11C 5/147 (2013.01); G11C 8/08 (2013.01); G11C 11/417 (2013.01); G11C 11/418 (2013.01); G11C 5/14 (2013.01);
Abstract
A fine grained negative wordline scheme for SRAM memories is disclosed. The scheme includes a circuit having a static random access memory (SRAM) cell including at least a wordline coupled to a plurality of NFETs of a transistor array. The circuit further includes a wordline driver including a plurality of inverters coupled between a wordline group decode node, a power supply and the wordline. Overvoltage on the wordline driver and NFETs of the SRAM cell are eliminated by applying a power gating mode and lowering the power supply voltage.