Semiconductor storage device and method of controlling the semiconductor storage device to minimize failures in data writing

Abstract

To minimize failures in data writing in a semiconductor storage device in which a transistor is provided for each memory cell. A first transistor has a gate connected to a gate signal line and a source connected to a first source signal line. A second transistor has a gate connected to the gate signal line and a source connected to a second source signal line. A storage element is connected to drains of the first transistor and the second transistor. A gate signal line potential control unit controls a potential of the gate signal line such that the potential becomes a predetermined high potential that is higher than a predetermined reference potential in a case in which the storage element is caused to store data. A source signal line potential control unit causes one of the potentials of the first source signal line and the second signal line to drop such that the one of the potentials becomes lower than the predetermined reference potential, on a basis of the data. A potential fixing unit fixes the one of the potentials at a specific potential in a case in which the one of the potentials has dropped and reached the specific potential that is lower than the predetermined reference potential.