The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Mar. 27, 2019
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventor:
Yoshiki Makiuchi, Minowa-machi, JP;
Assignee:
SEIKO EPSON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/24 (2006.01); H01L 21/822 (2006.01); H01L 27/04 (2006.01);
U.S. Cl.
CPC ...
G05F 3/24 (2013.01); H01L 21/822 (2013.01); H01L 27/04 (2013.01);
Abstract
In an N-channel depletion type first transistor, a gate is connected to a reference node and a drain is connected to a current output node. In a P-channel enhancement type second transistor, a gate and a drain are connected to the reference node and a source is connected to a source of the N-channel depletion type first transistor.