The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Sep. 07, 2018
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventor:

Zhuming Deng, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1339 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
G02F 1/13394 (2013.01); G02F 1/136209 (2013.01); H01L 27/1244 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01); G02F 1/1368 (2013.01); G02F 2001/13396 (2013.01); G02F 2001/13398 (2013.01); G02F 2001/136222 (2013.01);
Abstract

Provided is a manufacturing method of a black photo spacer array substrate. In a manufacturing method of a black photo spacer array substrate, a double layer color resist structure formed with a first color resist layer and a second color resist layer is used to pad a main pad part and a sub pad part of a main photo spacer and a sub photo spacer. Then, a thickness of the main photo spacer and a thickness of the sub photo spacer are decreased to reduce the usage amount of black photo spacer material of forming the main photo spacer and the sub photo spacer to reduce the production cost. A height difference of the main photo spacer and the sub photo spacer can be achieved by decreasing a thickness of the first color resist layer under the sub pad part with a half exposure process.


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