The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Nov. 29, 2018
SK Siltron Co., Ltd., Gumi-si, Gyeongsangbuk-do, KR;
Jae Hyeong Lee, Gumi-si, KR;
SK SILTRON CO., LTD., Gumi-si, Gyeongsangbuk-Do, KR;
Abstract
A method of identifying a wafer defect region is disclosed. The method includes preparing a sample wafer, forming a primary oxide film on the sample wafer at a temperature of 800° C. to 1000° C., forming a secondary oxide film on the primary oxide film at a temperature of 1000° C. to 1100° C., forming a tertiary oxide film on the secondary oxide film at a temperature of 1100° C. to 1200° C., removing the primary to tertiary oxide films, etching one surface of the sample wafer from which the primary to tertiary oxide films are removed to form haze on one surface of the sample wafer, and identifying a defect region of the sample wafer based on the haze.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile