The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Oct. 13, 2017
Applicant:

Invensense, Inc., San Jose, CA (US);

Inventors:

Ilya Gurin, Mountain View, CA (US);

Leonardo Baldasarre, Gavirate, VA (US);

Assignee:

INVENSENSE, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 27/28 (2006.01); G01B 7/31 (2006.01); G01B 7/305 (2006.01); G01B 7/00 (2006.01); H01L 21/66 (2006.01); G01D 5/241 (2006.01);
U.S. Cl.
CPC ...
G01B 7/31 (2013.01); G01B 7/003 (2013.01); G01B 7/305 (2013.01); H01L 22/34 (2013.01); G01D 5/2412 (2013.01); H01L 22/14 (2013.01);
Abstract

The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.


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