The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Apr. 19, 2016
Applicant:

The Japan Steel Works, Ltd., Shinagawa-ku, Tokyo, JP;

Inventors:

Tatsuya Matsumoto, Kanagawa, JP;

Keisuke Washio, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); C23C 16/455 (2006.01); C23C 16/509 (2006.01); C23C 16/44 (2006.01); C23C 16/30 (2006.01); C23C 14/56 (2006.01); C23C 16/458 (2006.01); H01L 21/02 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
C23C 16/042 (2013.01); C23C 14/564 (2013.01); C23C 16/308 (2013.01); C23C 16/4405 (2013.01); C23C 16/4412 (2013.01); C23C 16/458 (2013.01); C23C 16/4557 (2013.01); C23C 16/4558 (2013.01); C23C 16/4585 (2013.01); C23C 16/45521 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/45565 (2013.01); C23C 16/509 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02208 (2013.01); H01L 21/02274 (2013.01); H01L 21/68735 (2013.01); H01L 21/68742 (2013.01);
Abstract

A device for atomic layer deposition includes: a film deposition chamber; a stage installed inside the film deposition chamber; a susceptor that holds, on the stage, a substrate; a mask disposed on the substrate, the mask being sized to encompass the substrate; a mask pin that supports the mask; and a mask pin hole bored through the stage and the susceptor vertically, and allows the mask pin to be inserted in a vertically movable manner, wherein the susceptor has a susceptor body having a holding surface of the substrate, and a susceptor peripheral edge located around the susceptor body and having a height lower than the holding surface, the mask pin hole is opened in the susceptor peripheral edge, and in the susceptor peripheral edge, an inert gas supply port that releases gas upward is provided around the holding surface in a surrounding area of the mask.


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