The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Jan. 16, 2019
Applicants:
Aaron Reinicker, Buffalo, NY (US);
Ashwini K. Sinha, East Amherst, NY (US);
Qiong Guo, Clarence, NY (US);
Inventors:
Aaron Reinicker, Buffalo, NY (US);
Ashwini K. Sinha, East Amherst, NY (US);
Qiong Guo, Clarence, NY (US);
Assignee:
Praxair Technology, Inc., Danbury, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07F 7/22 (2006.01); C23C 14/48 (2006.01); H01J 37/317 (2006.01); H01J 37/32 (2006.01); C09D 5/24 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
C07F 7/2208 (2013.01); C09D 5/24 (2013.01); C23C 14/48 (2013.01); H01J 37/317 (2013.01); H01J 37/3171 (2013.01); H01J 37/32412 (2013.01); H01L 21/26513 (2013.01); H01L 21/26546 (2013.01); H01J 2237/006 (2013.01);
Abstract
A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage.