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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10632722 B1

PDFFull Text
Date of Patent:
Apr. 28, 2020

Filed:

Oct. 03, 2017

Composite material, method of forming the same, and apparatus including composite material

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Haengdeog Koh, Hwaseong-si, KR;

Doyoon Kim, Hwaseong-si, KR;

Seyun Kim, Seoul, KR;

Jinhong Kim, Seoul, KR;

Hajin Kim, Hwaseong-si, KR;

Soichiro Mizusaki, Suwon-si, KR;

Minjong Bae, Yongin-si, KR;

Hiesang Sohn, Seoul, KR;

Changsoo Lee, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

Attorney:

Cantor Colburn LLP

Primary Examiner:

Robert T Butcher

Int. Cl.
CPC ...
B32B 17/10 (2006.01); C03C 14/00 (2006.01); C03C 17/00 (2006.01); C03C 3/093 (2006.01); C01G 55/00 (2006.01); C03C 8/02 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
B32B 17/10174 (2013.01); C01G 55/004 (2013.01); C03C 3/093 (2013.01); C03C 8/02 (2013.01); C03C 14/002 (2013.01); C03C 14/006 (2013.01); C03C 17/008 (2013.01); B32B 17/10944 (2013.01); B82Y 30/00 (2013.01); C01P 2002/02 (2013.01); C01P 2004/03 (2013.01); C01P 2004/50 (2013.01); C01P 2004/51 (2013.01); C01P 2004/62 (2013.01); C01P 2004/64 (2013.01); C03C 2214/02 (2013.01); C03C 2214/16 (2013.01); C03C 2217/452 (2013.01); C03C 2217/48 (2013.01);
Abstract

A composite material structure including a matrix material layer; and a plurality of one-dimensional nanostructure distributed in the matrix material layer and having an electrical conductivity which is greater than an electrical conductivity of the matrix material layer, wherein the plurality of one-dimensional nanostructures includes a first one-dimensional nanostructure and a second one-dimensional nanostructure in contact with each other.

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