The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
May. 10, 2018
Canon Kabushiki Kaisha, Tokyo, JP;
Kazuaki Tashiro, Isehara, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A photoelectric conversion apparatus and an imaging system with reduced dark current noise while suppressed pixel size are provided. Each pixel has a photoelectric conversion unit and a diode. The photoelectric conversion unit has a first electrode layer, a second electrode layer between the first electrode layer and a semiconductor substrate, and a photoelectric conversion layer between the first electrode layer and the second electrode layer. A diode has a first impurity diffused portion of a first conductivity type and a second impurity diffused portion of a second conductivity type. The second electrode layer is connected to the first impurity diffused portion. The controlling unit applies a voltage to set the first impurity diffused portion and the second impurity diffused portion into a forwardly biased state and a voltage to set the first impurity diffused portion and the second impurity diffused portion into a reversely biased state to the diode.