The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Feb. 05, 2018
Applicant:

Zhuhai Crystal Resonance Technologies Co., Ltd., Zhuhai, CN;

Inventor:

Dror Hurwitz, Zhuhai, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/58 (2006.01); H03H 9/17 (2006.01); H03H 9/10 (2006.01); H03H 9/205 (2006.01); H01L 41/047 (2006.01); H01L 41/18 (2006.01); H03H 3/02 (2006.01);
U.S. Cl.
CPC ...
H03H 9/587 (2013.01); H01L 41/0475 (2013.01); H01L 41/0477 (2013.01); H01L 41/18 (2013.01); H03H 3/02 (2013.01); H03H 9/1014 (2013.01); H03H 9/173 (2013.01); H03H 9/174 (2013.01); H03H 9/205 (2013.01); H03H 9/582 (2013.01); H03H 9/588 (2013.01); H03H 2003/021 (2013.01);
Abstract

An FBAR filter device comprising an array of resonators, each resonator comprising a single crystal piezoelectric layer sandwiched between a first and a second metal electrode, wherein the first electrode is supported by a support membrane over an air cavity, the air cavity being embedded in a silicon dioxide layer over a silicon handle, with through-silicon via holes through the silicon handle and into the air cavity, the side walls of said air cavity in the silicon dioxide layer being defined by barriers of a material that is resistant to silicon oxide etchants, and wherein the interface between the support membrane and the first electrode is smooth and flat.


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