The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

May. 11, 2017
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Miki Kagano, Chiyoda-ku, JP;

Tomokazu Ogomi, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01); G07D 7/004 (2016.01); G07D 7/04 (2016.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03F 3/68 (2013.01); G07D 7/004 (2013.01); G07D 7/04 (2013.01); H03K 17/687 (2013.01); H03F 2200/228 (2013.01); H03F 2200/294 (2013.01);
Abstract

A bias current circuit includes: an N-type MOSFET in which a gate terminal and a drain terminal are connected to a current source, and N-type MOSFETs in which respective drain terminals are connected to respective bias current output terminals and source terminals are grounded. The bias current circuit further includes: an N-type MOSFET in which one terminal type, either a drain terminal or a source terminal, is connected to the gate terminal of the N-type MOSFET, and the other terminal type is connected to the gate terminals of the N-type MOSFETs, and an N-type MOSFET in which a drain terminal is connected to the gate terminals of the N-type MOSFETs and a source terminal is grounded. A control signal, that is LOW when the bias current is supplied and is HIGH when the bias current is not supplied, is input to the gate terminal of the N-type MOSFET, and an inverse signal of the control signal is input to the gate terminal of the N-type MOSFET.


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