The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Apr. 12, 2016
Applicant:

Toshiba Mitsubishi-electric Industrial Systems Corporation, Chuo-ku, JP;

Inventors:

Keisuke Ohnishi, Chuo-ku, JP;

Shoichi Abe, Chuo-ku, JP;

Kazunori Sanada, Chuo-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 7/12 (2006.01); H02M 7/483 (2007.01); H02M 1/32 (2007.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 7/12 (2013.01); H02M 1/32 (2013.01); H02M 7/483 (2013.01); H02M 2001/0006 (2013.01); H02M 2001/0054 (2013.01);
Abstract

A converter includes a first diode having an anode and a cathode connected respectively to an input terminal and a first output terminal, a second diode having an anode and a cathode connected respectively to a second output terminal and the input terminal, a first transistor connected between the first output terminal and the input terminal, a second transistor connected between the input terminal and the second output terminal, and a bidirectional switch connected between the input terminal and a third output terminal and including third to sixth diodes and a third transistor. Each of the first diode, the second diode, and the third transistor is made of a wide bandgap semiconductor. Each of the first and second transistors and the third to sixth diodes is made of a semiconductor other than the wide bandgap semiconductor.


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