The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Aug. 28, 2018
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Song Liu, Beijing, CN;

Yu Wen, Beijing, CN;

Jianming Sun, Beijing, CN;

Zhengliang Li, Beijing, CN;

Xiaochen Ma, Beijing, CN;

Hehe Hu, Beijing, CN;

Wenlin Zhang, Beijing, CN;

Jianhua Du, Beijing, CN;

Ce Ning, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01); H01L 51/44 (2006.01); H01L 29/786 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/428 (2013.01); H01L 51/4213 (2013.01); H01L 51/441 (2013.01); H01L 29/786 (2013.01); H01L 51/0512 (2013.01); Y02E 10/549 (2013.01);
Abstract

The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.


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