The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Jan. 30, 2019
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Tsuyoshi Suzuki, Tokyo, JP;

Shinji Hara, Tokyo, JP;

Atsushi Shimura, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H03B 15/00 (2006.01); H03H 1/00 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H03H 2/00 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 27/22 (2013.01); H01L 43/02 (2013.01); H03B 15/006 (2013.01); H03H 1/0007 (2013.01); H03H 2/00 (2013.01); H03H 2001/0057 (2013.01); H03H 2001/0085 (2013.01);
Abstract

The magnetoresistance effect device includes first and second ports, a first circuit unit and a second circuit unit connected between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, the first circuit unit includes a first magnetoresistance effect element, the second circuit unit includes a second magnetoresistance effect element and a first conductor separated from the second magnetoresistance effect element with an insulating body therebetween and a first end portion of the first conductor is connected to an input side of high frequency current such that high frequency magnetic field generated by the high frequency current flowing through the first conductor is applied to the magnetization free layer of the second magnetoresistance effect element.


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