The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Jun. 14, 2017
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventor:

Jung Hun Oh, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/02 (2010.01); H01L 33/36 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/02 (2013.01); H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/387 (2013.01); H01L 33/40 (2013.01);
Abstract

A semiconductor device includes a substrate; first and second semiconductor layers arranged on the substrate and having different conductive types; a third semiconductor layer arranged between the first semiconductor layer and the second semiconductor layer; a first electrode arranged on the first semiconductor layer so as to be electrically connected to the first semiconductor layer; a second electrode arranged on the second semiconductor layer so as to be electrically connected to the second semiconductor layer; and a first insulating layer arranged, between the first electrode and the second electrode, on the exposed first, second and third semiconductor layers, wherein a first end part, close to the second electrode, among both end parts of the first electrode, and/or a second end part, which is both end parts of the second electrode, has an electric field dispersion part.


Find Patent Forward Citations

Loading…