The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Apr. 25, 2017
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Armelle Even, Regensburg, DE;
Miryam Elouneg-Jamroz, Grenoble, FR;
Ivan-Christophe Robin, Grenoble, FR;
Abstract
Disclosed is a light-emitting diode containing: first and second semiconductor layers respectively n-doped and p-doped, forming a p-n junction; an active zone placed between the first and second layers, including an InGaN emitting layer able to form a quantum well, and two InGaN, where 0<Y<X, barrier layers between which the emitting layer is placed; and an intermediate layer, which is placed either in the barrier layer located between the emitting layer and the first layer and portions of which are then on either side of the intermediate layer, or placed between the barrier layer and the emitting layer. The intermediate layer includes a III-N semiconductor of bandgap wider than that of the barrier layer. The second layer includes GaN or InGaN, where 0<W<Y, and the first layer includes InGaN, where V>W>0.