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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10629766 B1

PDFFull Text
Date of Patent:
Apr. 21, 2020

Filed:

Aug. 31, 2018

Method for manufacturing ultraviolet photodetector based on ga2o3 material

Applicant:

Xidian University, Xi'an, CN;

Inventors:

Lei Yuan, Xi'an, CN;

Renxu Jia, Xi'an, CN;

Hongpeng Zhang, Xi'an, CN;

Yuming Zhang, Xi'an, CN;

Assignee:

XIDIAN UNIVERSITY, Xi'an, CN;

Attorney:

WPAT, PC

Primary Examiner:

Michelle Mandala

Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/0224 (2006.01); H01L 31/0304 (2006.01); H01L 31/0312 (2006.01); H01L 31/0336 (2006.01); H01L 31/18 (2006.01); H01L 31/032 (2006.01); H01L 31/11 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 14/08 (2006.01); C23C 14/35 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); H01L 21/02414 (2013.01); H01L 21/02433 (2013.01); H01L 21/02483 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02658 (2013.01); H01L 31/022408 (2013.01); H01L 31/032 (2013.01); H01L 31/0312 (2013.01); H01L 31/0336 (2013.01); H01L 31/03044 (2013.01); H01L 31/107 (2013.01); H01L 31/11 (2013.01); H01L 31/1864 (2013.01); C23C 14/08 (2013.01); C23C 14/35 (2013.01); C23C 16/40 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02631 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method for manufacturing an ultraviolet photodetector based on GaOmaterial are provided. The method includes: selecting a substrate; forming a GaOlayer on an upper surface of the substrate; forming a top electrode on the GaOlayer; and forming a bottom electrode on a lower surface of the substrate. GaOmaterial is adopted, with a light transmittance in the solar blind area can reach 80% or even 90%. The GaOmaterial is suitable for application to a light absorbing layer, and its transparent conductive electrical properties are also beneficial to improve the light absorption capacity of the light absorbing layer, thereby greatly improving the device performance of the photodetector diode.

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