The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Sep. 21, 2018
Powercubesemi, Inc., Bucheon-si, Gyeonggi-do, KR;
Sin Su Kyoung, Seoul, KR;
Tae Young Kang, Gwangju-si, KR;
PowerCubeSemi, INC., Gyeonggi-do, KR;
Abstract
Disclosed is a SiC wide trench-type junction barrier Schottky diode. The Schottky diode includes a SiC N− epitaxial layer formed on a SiC N-type substrate and a Schottky metal layer having a planar Schottky metal pattern layer and a downwardly depressed trench-type Schottky metal pattern layer, which are alternately formed at predetermined intervals and on the upper end part of the SiC N− epitaxial layer. The Schottky diode includes a Pjunction pattern formed so as to permeate from the lower part of the trench-type Schottky metal pattern layer to the SiC N− epitaxial layer and a cathode electrode formed on the lower part of the SiC N-type substrate. The width of the Pjunction pattern is narrower than the width of the trench-type Schottky metal pattern layer, and the Pjunction pattern is not formed on a side wall vertical surface region of the trench-type Schottky metal pattern layer.