The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Jan. 04, 2018
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Cuili Gai, Beijing, CN;

Ling Wang, Beijing, CN;

Baoxia Zhang, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78633 (2013.01); H01L 27/12 (2013.01); H01L 27/1222 (2013.01); H01L 29/66757 (2013.01); H01L 29/786 (2013.01);
Abstract

A thin film transistor, a manufacturing method of the thin film transistor, an array substrate and a manufacturing method of the array substrate are provided. The thin film transistor includes a base substrate, a metal light-shielding layer and a first active layer which are on the base substrate, and a spacer layer between the first active layer and the metal light-shielding layer; the first active layer includes a channel region, and the spacer layer is between the channel region and the metal light-shielding layer.


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