The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Jul. 14, 2014
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Yutong Hu, Guangdong, CN;
Chihyuan Tseng, Guangdong, CN;
Chihyu Su, Guangdong, CN;
Wenhui Li, Guangdong, CN;
Xiaowen Lv, Guangdong, CN;
Longqiang Shi, Guangdong, CN;
Hejing Zhang, Guangdong, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
The present invention provides a manufacture method and a structure of an oxide thin film transistor. The manufacture method of the structure of the oxide thin film transistor comprises providing a carrier; forming an oxide semiconducting layer (); forming an etching stopper layer (); forming two vias () in the etching stopper layer () to expose the oxide semiconducting layer (); removing a skin layer of the oxide semiconducting layer () in the two vias () to form two recesses () respectively connecting the two vias (); forming a source () and a drain () on the etching stopper layer (), and the source () fills one via () and the recess () connecting therewith, and the drain () fills the other via () and the recess () connecting therewith; performing a post process.