The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Jul. 25, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jung Gun You, Ansan-si, KR;

Dong Hyun Kim, Hwaseong-si, KR;

Byoung-Gi Kim, Suwon-si, KR;

Yun Suk Nam, Yongin-si, KR;

Yeong Min Jeon, Hwaseong-si, KR;

Sung Chul Park, Seongnam-si, KR;

Dae Won Ha, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/532 (2006.01); H01L 27/088 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7855 (2013.01); H01L 21/762 (2013.01); H01L 21/76229 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 23/5329 (2013.01); H01L 27/0886 (2013.01); H01L 29/0642 (2013.01); H01L 29/6681 (2013.01); H01L 21/823437 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device includes first and second fin patterns on a substrate and extending apart from each other, a field insulating film on the substrate and surrounding parts of the first and second fin patterns, a first gate structure on the first fin pattern and intersecting the first fin pattern, a second gate structure on the second fin pattern and intersecting the second fin pattern, and a separating structure protruding from a top surface of the field insulating film and separating the first and second gate structures, the field insulating film and the separating structure including a same insulating material.


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