The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Aug. 10, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Albert Birner, Regensburg, DE;
Helmut Brech, Lappersdorf, DE;
Matthias Zigldrum, Regensburg, DE;
Michaela Braun, Regensburg, DE;
Jan Ropohl, Regensburg, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/48 (2006.01); H01L 29/417 (2006.01); H01L 23/528 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/7682 (2013.01); H01L 21/76804 (2013.01); H01L 21/76877 (2013.01); H01L 23/481 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53228 (2013.01); H01L 23/53295 (2013.01); H01L 29/4175 (2013.01); H01L 29/66681 (2013.01); H01L 29/7835 (2013.01); H01L 23/53238 (2013.01); H01L 29/0696 (2013.01); H01L 29/1045 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01);
Abstract
In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor in the front surface, and a metallization structure arranged on the front surface. The metallization structure includes at least one cavity arranged in at least one dielectric layer. Related methods of manufacture are also described.