The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Feb. 21, 2018
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kenjiro Uesugi, Kawasaki, JP;

Shigeya Kimura, Yokohama, JP;

Masahiko Kuraguchi, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/205 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0865 (2013.01); H01L 29/1037 (2013.01); H01L 29/1054 (2013.01); H01L 29/205 (2013.01); H01L 29/4236 (2013.01); H01L 29/66462 (2013.01); H01L 29/66522 (2013.01); H01L 29/66734 (2013.01); H01L 29/7788 (2013.01); H01L 29/7789 (2013.01); H01L 29/045 (2013.01); H01L 29/0696 (2013.01); H01L 29/2003 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes first, second and third electrodes, first, second, third, and fourth semiconductor regions, and an insulating portion. The first electrode includes first and second electrode portions. The first semiconductor region includes first, second, and third semiconductor portions. The first semiconductor portion is provided between the first electrode portion and the second electrode. The second semiconductor portion is provided between the second electrode portion and the third electrode. The third semiconductor portion is provided between the first and second semiconductor portions. The second semiconductor region is provided between the first semiconductor portion and the second electrode. The third semiconductor region is positioned between the second semiconductor region and the third electrode. The insulating portion includes first and second insulating regions. At least a portion of the fourth semiconductor region is provided between the second semiconductor region and the second electrode.


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Uesugi, Kenjiro. (2020). Semiconductor device and method for manufacturing the same (U.S. Patent No. 10629724). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10629724

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