The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Dec. 20, 2013
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/47 (2006.01); H01L 29/872 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7806 (2013.01); H01L 29/0878 (2013.01); H01L 29/47 (2013.01); H01L 29/66143 (2013.01); H01L 29/66712 (2013.01); H01L 29/872 (2013.01); H01L 29/1095 (2013.01); H01L 29/41766 (2013.01);
Abstract
A semiconductor device containing a vertical power MOSFET with a planar gate and an integrated Schottky diode is formed by forming a source electrode on an extended drain of the vertical power MOSFET to form the Schottky diode and forming the source electrode on a source region of the vertical power MOSFET. The Schottky diode is connected through the source electrode to the source region. A drain electrode is formed at a bottom of a substrate of the semiconductor device. The Schottky diode is connected through the extended drain of the vertical power MOSFET to the drain electrode.