The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Nov. 27, 2018
Applicant:
Korea Institute of Science and Technology, Seoul, KR;
Inventors:
Assignee:
Korea Institute of Science and Technology, Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66045 (2013.01); H01L 21/0262 (2013.01); H01L 21/02112 (2013.01); H01L 21/02178 (2013.01); H01L 21/02271 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02527 (2013.01); H01L 29/1606 (2013.01); H01L 29/4908 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66969 (2013.01); H01L 21/0228 (2013.01); H01L 21/02485 (2013.01); H01L 29/24 (2013.01);
Abstract
A method for forming a hexagonal boron nitride (h-BN) thin film is provided. According to the method, an alumina thin film including amorphous alumina or gamma-alumina is prepared. An h-BN thin film is synthesized at equal to or less than 750° C. on the alumina thin film. A mono-layer thickness of the h-BN film is equal to or less than 0.40 nm.