The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Aug. 17, 2018
Sony Corporation, Tokyo, JP;
Taiichiro Watanabe, Kanagawa, JP;
Ryosuke Nakamura, Kanagawa, JP;
Yusuke Sato, Kanagawa, JP;
Fumihiko Koga, Kanagawa, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.